SiC & GaN Power Devices Market Share, Key Market Players, Trends & Forecast, 2020–2028

Global SiC & GaN Power Devices Market research report published by Reports and Data is an extensive and thorough research on the SiC & GaN Power Devices market based on key factors such as market risks, opportunities, challenges faced by the market, government policies and regulatory framework, current and emerging trends, recent technological developments, key competitors, and regional bifurcation.The report provides a comprehensive analysis of current market dynamics and the factors that might influence the growth of the market or hamper it.The report leverages advanced tools such as SWOT analysis and Porter’s Five Forces analysis for an accurate estimation of the market growth and revenue growth rate. The report also provides an extensive analysis of the impact of COVID-19 pandemic and how it has contributed to progress of the market.

The report gives crucial data about the current and future trends that will influence the market growth for the established companies as well as new entrants. The report also provides details about key companies and their strategic endeavors to help clients and readers gain a better understanding of the competitive landscape.

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Information and communications technology (ICT) refers to the unified communications and integration of telecommunications and computers. ICT is the infrastructure and components that enable modern computing and the technology is used to efficiently handle communications processes such as broadcast media, telecommunications, audiovisual processing and transmission systems, and network-based control and monitoring functions. Rapid advancements in big data and machine learning has contributed to significant progress of the ICT industry. Integration of cloud-computing, availability of large number of mobile apps, rapid automation across the numerous end-use industries, and advancements in artificial intelligence are some key factors expected to drive market revenue growth over the forecast period. The advent of Internet of Things (IoT), increasing research and development activities, and development of robust business intelligence tools are some other factors contributing to market growth.

The report offers extensive analysis of the key drivers, challenges, limitations, and current and emerging trends of the market.The report also provides strategic recommendations and insights for new entrants to propel their entry into the market and overcome entry-level barriers and thereby contribute to revenue growth of the market. The competitive landscape segment further offers key insights into mergers and acquisitions, collaborations, partnerships, agreements, corporate deals, and brand promotions among others. The report also provides deeper insights into the workings and product portfolio of each market player to help clients better understand the market competition.

Key companies profiled in the report include:

• ALPHA & OMEGA Semiconductor
• Avogy
• Microsemi
• Broadcom Limited
• Cambridge Electronics
• Mitsubishi Electric
• Qorvo
• Cree
• Efficient Power Conversion (EPC)
• EXAGAN
• GaN Systems

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The market report further segments the market into types, applications and regions and provides details about factors affecting and driving their revenue growth and the estimated revenue growth over the forecast period. An in-depth country wise analysis is also offered for better understanding.

SiC & GaN Power Devices Market Breakdown:

By Type (Revenue, USD Billion; 2017–2027)

• GaN Power Devices
• SiC Power Devices

By End-user Industry (Revenue, USD Billion; 2017–2027)

• Communication
• Automotive
• Consumer Electronics
• Aerospace & Defense
• Healthcare
• Power & Energy
• Others

Regional Outlook:

North America (U.S., Canada, Mexico)

Europe (U.K., Italy, Germany, France, Rest of EU)

Asia Pacific (India, Japan, China, South Korea, Australia, Rest of APAC)

Latin America (Chile, Brazil, Argentina, Rest of Latin America)

Middle East & Africa (Saudi Arabia, U.A.E., South Africa, Rest of MEA)

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